GaN
Precision Substrates
Gallium Nitride (GaN) Substrate
Ultra-pure gallium nitride substrates engineered for advanced semiconductor fabrication. Our GaN wafers feature exceptional crystalline quality, low defect density, and superior electrical properties. Essential for next-generation power electronics and 5G/6G RF applications.
Atomic #
0
Atomic Wt
69.72 (Ga) / 14.01 (N)
CAS #
25617-97-4
Purity
99+%
Available Forms
2-inch wafers
4-inch wafers
6-inch wafers
Custom sizes
Purity Grades
99.99%
99.999%
Research Grade
Applications
Semiconductor
- ✓Power conversion devices
- ✓RF transistors
- ✓5G/6G infrastructure
Permanent Magnets
- ✓Permanent device substrates
Optical & Display
- ✓UV LEDs
- ✓Laser diodes
Technical Specifications
| Crystal Structure | Hexagonal (Wurtzite) |
| Bandgap Energy | 3.44 eV (direct) |
| Dislocation Density | <10⁸ cm⁻² (HVPE-grown) |
| Sheet Resistance | Adjustable per specification |
| Thermal Conductivity | 130 W/m·K (parallel to c-axis) |
Storage Requirements
Store in cleanroom environment or sealed ESD-safe containers. Maintain room temperature and low humidity (<30% RH). Handle with care to avoid mechanical damage.
Packaging Options
- •ESD-safe wafer cases
- •Ultra-clean packaging
- •Nitrogen-purged containers
- •Custom protective packaging
Request Gallium Nitride (GaN) Substrate
Get a custom quote or learn more about our gallium nitride (gan) substrate supply options.