InP
Advanced Materials & Semiconductors
Indium Phosphide
Indium phosphide is a direct-bandgap III-V semiconductor crucial for high-speed transistors, optoelectronic devices, and integrated circuits. Its superior electron mobility and direct bandgap make it ideal for fiber-optic communications and specialized RF applications.
Atomic #
0
Atomic Wt
114.82 (In) / 30.97 (P)
CAS #
22541-49-3
Purity
99+%
Available Forms
Wafer
Ingot
Powder
Sputtering Targets
Purity Grades
99.9999%
99.99999%
Applications
Semiconductor
- ✓High-speed transistors
- ✓Integrated circuits
Aerospace
- ✓Radiation-hardened components
Optical & Display
- ✓Laser diodes
- ✓Photodetectors
- ✓Fiber-optic devices
Technical Specifications
| Bandgap Energy | 1.35 eV (direct) |
| Melting Point | 1062°C |
| Density | 4.81 g/cm³ |
| Electron Mobility | 4600 cm²/V·s @ 300K |
| Thermal Conductivity | 68 W/m·K @ 300K |
Storage Requirements
Store in cleanroom environment or sealed containers. Maintain low humidity. Standard shelf life: indefinite.
Packaging Options
- •Wafer carriers
- •100g ingots
- •Research quantities
- •Custom specifications
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